MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes

Authors
Vinokurov, DA Kapitonov, VA Nikolaev, DN Stankevich, AL Lyutetskii, AV Pikhtin, NA Slipchenko, SO Sokolova, ZN Fetisova, NV Arsent'ev, IN Tarasov, IS
Citation
Da. Vinokurov et al., MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes, SEMICONDUCT, 35(11), 2001, pp. 1324-1328
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
11
Year of publication
2001
Pages
1324 - 1328
Database
ISI
SICI code
1063-7826(2001)35:11<1324:MBAILD>2.0.ZU;2-A
Abstract
A MOCVD technology for growth of InGaAs/GaAs/InGaP laser heterostructures o n a modified Epiquip VP-50-RP installation was developed. Mesa stripe laser diodes with threshold current density J(th) = 100-200 A/cm(2), internal op tical loss alpha (i) = 1.3-1.7 cm(-1), and internal quantum efficiency eta (i) = 60-70% have been fabricated. A CW output optical power of 5 W has bee n obtained for a single 100-mum-wide aperture mesa stripe laser diode emitt ing at 1.03 mum. It is shown that use of AlGaAs waveguide layers, which inc rease the conduction band barrier offset, lowers the temperature sensitivit y of laser heterostructures within the temperature range 10-80 degreesC. (C ) 2001 MAIK "Nauka/ Interperiodica".