Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

Authors
Gordeev, NY Ivanov, SV Kopchatov, VI Novikov, II Shubina, TV Il'inskaya, ND Kop'ev, PS Reuscher, G Waag, A Landwehr, G
Citation
Ny. Gordeev et al., Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers, SEMICONDUCT, 35(11), 2001, pp. 1340-1344
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
11
Year of publication
2001
Pages
1340 - 1344
Database
ISI
SICI code
1063-7826(2001)35:11<1340:IDSOBI>2.0.ZU;2-2
Abstract
Degradation characteristics of p-i-n BeZnSe/Zn(Be)CdSe light-emitting diode s were investigated. Undoped short-period superlattices, which provide effi cient hole transport from the p(+)-BeTe:N near-contact region (hole injecto r) into the active region, were used instead of the p-doped BeZnSe:N emitte r. It is demonstrated that this makes it possible to considerably lengthen the operating life of the light-emitting diodes at highest direct current d ensities (similar to4.5 kA/cm(2)) at room temperature. (C) 2001 MAIK "Nauka / Interperiodica".