Investigation of Ti1-xAlxN films as diffusion barrier between Cu and Si

Films of (Ti,Al)N have been grown onto Si(100) by direct current reactive m agnetron sputtering from a Ti-Al alloy target (Ti/Al=90.10at.-%) at differe nt nitrogen flowrates and bias voltages. The effects of nitrogen flowrate a nd bias voltage on the electrical resistance of Ti1-xAlxN films were studie d. The feasibility of using Ti1-xAlxN films as a diffusion barrier between Cu and Si was investigated. Results indicated that the atomic ratio of Ti/A l decreased, however nitrogen increased with an increase in the nitrogen fl owrate. A higher critical nitrogen flowrate was required to obtain the stoi chiometric composition for Ti1-xAlxN films deposited tinder lower bias volt ages. The resistivity of Ti1-xAlxN films was substantially affected by the effects of stoichiometric structure and grain size. Results of sheet resist ivity and Auger electron spectroscopy suggest the feasibility of using Ti1- xAlxN as a diffusion barrier material between Cu and Si up to 700 degreesC.