Relaxation of Cu(100), (110) and (111) surfaces using ab initio pseudopotentials

Citation
Jc. Zheng et al., Relaxation of Cu(100), (110) and (111) surfaces using ab initio pseudopotentials, SURF REV L, 8(5), 2001, pp. 541-547
Citations number
39
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SURFACE REVIEW AND LETTERS
ISSN journal
0218625X → ACNP
Volume
8
Issue
5
Year of publication
2001
Pages
541 - 547
Database
ISI
SICI code
0218-625X(200110)8:5<541:ROC(A(>2.0.ZU;2-4
Abstract
The geometries of the Cu(100), Cu(110) and Cu(111) surfaces are determined using ab initio pseudopotential calculations. Use of the Hellmann-Feynman t heorem to calculate forces allows the determination of the equilibrium atom ic positions with a small number of trial geometries. Our calculated result s show that the surface relaxation of Cu(100) and Cu(110) surfaces are inwa rd relaxations, while that of Cu(111) surface is slightly outward relaxatio n. Our results show that the forces, charge transfer and the detailed elect ronic structure of the Cu surface will affect the relaxation of the outermo st layer. The calculated results are in good agreement with the results obt ained by various experiments.