Deposition of mass-selected cluster ions using a pulsed arc cluster-ion source

A PACIS (pulsed are cluster-ion source) developed for high average cluster- ion currents is presented. The performance of the PACIS at different operat ional modes is described, and the suitability for cluster-deposition experi ments is discussed in comparison with other cluster-ion sources. Maximum cu rrents of mass-selected cluster ions of 3-6 nA of small Sin (n = 4-10) clus ters and 0.3-0.5 nA of large Al-n(+/-) (n = 20-70) clusters are achieved. T he mass-selected cluster ions are soft-landed on a substrate at residual ki netic energies lower than 1 eV/atom, and the samples are characterized by X -ray photoelectron spectroscopy and scanning tunneling microscopy. First re sults on the soft landing of "magic" Si-4(-) clusters on graphite are prese nted.