Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots

We have observed hysteresis loops in current transport in a GaAs metal-semi conductor-metal diode containing InAs quantum dots. The dots in our structu re are directly embedded under the GaAs-metal interface. The charging and d ischarging of electrons in the dots modulate the current and produce hyster esis. These processes are controlled by the applied voltages. The dots are charged by forward current flowing through the structure. The discharging o f the electrons is dominated by the tunneling process under high reverse bi as. The modulated currents are well fitted with an electron-trapping model considering both the ground states and the excited states of the quantum do ts.