The nature of arsenic incorporation in GaN

Authors
Bell, A Ponce, FA Novikov, SV Foxon, CT Harrison, I
Citation
A. Bell et al., The nature of arsenic incorporation in GaN, APPL PHYS L, 79(20), 2001, pp. 3239-3241
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
20
Year of publication
2001
Pages
3239 - 3241
Database
ISI
SICI code
0003-6951(20011112)79:20<3239:TNOAII>2.0.ZU;2-6
Abstract
A systematic study of the nature of arsenic incorporation in GaN grown by m olecular-beam epitaxy is presented. The samples were grown with concentrati ons of arsenic ranging from 3.4x10(17) to 4.2x10(18) cm(-3). Secondary ion mass spectroscopy data show that increasing the As concentration has the ef fect of increasing the amount of As in the nitrogen site as compared to As in the gallium site. This trend is used to explain the reduction in carrier mobility with increasing As concentration. (C) 2001 American Institute of Physics.