Stable island arrays by height-constrained Stranski-Krastanov growth

Authors
Citation
J. Liang et Z. Suo, Stable island arrays by height-constrained Stranski-Krastanov growth, APPL PHYS L, 79(20), 2001, pp. 3251-3253
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
20
Year of publication
2001
Pages
3251 - 3253
Database
ISI
SICI code
0003-6951(20011112)79:20<3251:SIABHS>2.0.ZU;2-6
Abstract
In the Stranski-Krastanov system, the lattice mismatch between the film and the substrate causes the film to break into islands. During annealing, bot h surface energy, and elastic energy drive the islands to coarsen: some isl ands enlarge and others shrink, keeping the total island volume constant. T he islands produced this way are usually uneven in size and spacing. Motiva ted by several related studies, we suggest that stable, uniform islands sho uld form when a stiff ceiling is placed at a small gap above the film. Afte r contacting the ceiling, the islands are constrained to grow laterally and remain coherent with the substrate, preventing further stress relaxation. In fact, we show that the role of elasticity is reversed: with the ceiling, the total elastic energy stored in the system increases as the islands coa rsen laterally. On the other hand, the total surface energy decreases as th e islands coarsen. Consequently, the islands select an equilibrium size to minimize the combined elastic energy and surface energy. We estimate the eq uilibrium island size by analyzing an idealized model. (C) 2001 American In stitute of Physics.