Atomic-scale processes involved in long-term changes in the density of states distribution at the Si/SiO2 interface

We utilize very sensitive magnetic resonance measurements to observe change s in the densities of interface trap centers hundreds of hours after irradi ation. Our observations provide direct atomic-scale evidence for slow chang es in Si/SiO2 interface-state density distributions which appear after the devices have been damaged. Our observations also explain (at least in part) why different groups report somewhat different shapes for the density of i nterface states in the silicon band gap. (C) 2001 American Institute of Phy sics.