Controlled creation of a carbon nanotube diode by a scanned gate

We use scanning gate microscopy to precisely locate the gating response in field-effect transistors (FETs) made from semiconducting single-wall carbon nanotubes. A dramatic increase in transport current occurs when the device is electrostatically doped with holes near the positively biased electrode . We ascribe this behavior to the turn-on of a reverse biased Schottky barr ier at the interface between the p-doped nanotube and the electrode. By pos itioning the gate near one of the contacts, we convert the nanotube FET int o a rectifying nanotube diode. These experiments both clarify a longstandin g debate over the gating mechanism for nanotube FETs and indicate a strateg y for diode fabrication based on controlled placement of acceptor impuritie s near a contact. (C) 2001 American Institute of Physics.