Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells

Authors
Kim, ET Chen, ZH Madhukar, A
Citation
Et. Kim et al., Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells, APPL PHYS L, 79(20), 2001, pp. 3341-3343
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
20
Year of publication
2001
Pages
3341 - 3343
Database
ISI
SICI code
0003-6951(20011112)79:20<3341:TDBOIQ>2.0.ZU;2-O
Abstract
We report on tailoring detection bands of InAs quantum-dot infrared photode tectors (QDIPs) using InxGa1-xAs strain-relieving capping layers that also act as quantum wells (QWs). QDIPs with InAs QDs capped by a 20 ML In0.15Ga0 .85As QW show a sharp photoresponse at similar to9 mum, while the counterpa rt QDIPs without QWs show broad photoresponse in the 5-7 mum range. The exc ited states involved in the intraband transitions in QDIPs with the In0.15G a0.85As QW appear to be coupled QD and QW electron excited states. (C) 2001 American Institute of Physics.