Generation of coherent acoustic phonons in strained GaN thin films

Citation
Yk. Huang et al., Generation of coherent acoustic phonons in strained GaN thin films, APPL PHYS L, 79(20), 2001, pp. 3361-3363
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
20
Year of publication
2001
Pages
3361 - 3363
Database
ISI
SICI code
0003-6951(20011112)79:20<3361:GOCAPI>2.0.ZU;2-J
Abstract
Coherent acoustic phonon oscillations were generated and studied in straine d GaN thin films. Inside the bulk GaN film, the longitudinal interference o f an ultraviolet femtosecond pump pulse created periodic carrier distributi on that screened out the strain-induced piezoelectric field and initiated t he coherent longitudinal acoustic phonon oscillations corresponding to the carrier periods. The created coherent phonon oscillation modulated the piez oelectric field thus modified the absorption property of the GaN thin film through Franz-Keldysh effect. This time-dependent absorption modulation was reflected in the transmission variation of the followed probe pulses, resu lting a long decay time similar to 300 ps for the initiated coherent phonon oscillations. (C) 2001 American Institute of Physics.