Growth and doping of GaN and AlN single crystals under high nitrogen pressure

This work describes the recent results of gallium nitride and aluminum nitr ide crystal growth by the High Nitrogen Pressure Solution Growth (HNPSG) me thod. For GaN, the growth without intentional seeding leads to the growth o f hexagonal platelets of average size of 1 cm(2). The seeded growth into {1 1 (2) over bar0} and {0001} directions also gives the promising results. Th e AIN growth without intentional seeding results in needle-like crystals. T he influence of supersaturation on habit and morphology of both GaN and AIN crystals is discussed.