Structure of oxygen - Implanted silicon single crystals treated at >= 1400K under high argon pressure

Authors
Misiuk, A Barcz, A Ratajczak, J Katcki, J Bak-Misiuk, J Bryja, L Surma, B Gawlik, G
Citation
A. Misiuk et al., Structure of oxygen - Implanted silicon single crystals treated at >= 1400K under high argon pressure, CRYST RES T, 36(8-10), 2001, pp. 933-941
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
36
Issue
8-10
Year of publication
2001
Pages
933 - 941
Database
ISI
SICI code
0232-1300(2001)36:8-10<933:SOO-IS>2.0.ZU;2-3
Abstract
The structure of oxygen - implanted (up to a dose 6x10(17) cm(-2)) silicon, Si:O, treated at 1400 - 1550 K under high (up to 1.5 GPa) argon pressure, was investigated by numerous methods. The oxygen distribution peak narrowed , the dimensions of extended defects decreased and the peak intensity in th e Si - O - Si asymmetric stretching vibrational mode diminished with pressu re, That effects are explained by decreased misfit at the SiO2-x / Si bound ary and more numerous nucleation sites created in Si:O treated at high pres sure.