Control of parameters of III-V compound microcrystals and epitaxial layersby means of complex doping

Influence is studied of complex doping of InSb microcrystals and GaAs epita xial layers with admixtures of Sri, An, Al, Yb, Cr and Mn upon electrophysi cal parameters of the materials, their time stability and hardness to the f ast neutron irradiation. It is found that for GaAs epitaxial layers conside rable decrease in the free charge carrier concentration may be achieved by optimal quantitative combination of Al and Yb dopant during growth. For InS b microcrystals Sri admixture provides the desired range of free charge car rier concentrations from the intrinsic one up to 10(19) cm(-3). An admixtur e is a good catalyzer for whisker microcrystal growth and it facilitates In Sb growth, while Cr admixture improves radiation resistance of the microcry stals, The possibility of application of the obtained materials for the dev elopment of Hall sensors operating efficiently under extreme external condi tions, in particular under the conditions of high radiation loads, is verif ied.