Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and AlxGa1-xAs

Authors
Sciana, B Radziewicz, D Paszkiewicz, B Tlaczala, M Utko, M Sitarek, P Misiewcz, J Kinder, R Kovac, J
Citation
B. Sciana et al., Epitaxial growth and characterisation of silicon delta-doped GaAs, AlAs and AlxGa1-xAs, CRYST RES T, 36(8-10), 2001, pp. 1145-1154
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CRYSTAL RESEARCH AND TECHNOLOGY
ISSN journal
02321300 → ACNP
Volume
36
Issue
8-10
Year of publication
2001
Pages
1145 - 1154
Database
ISI
SICI code
0232-1300(2001)36:8-10<1145:EGACOS>2.0.ZU;2-1
Abstract
Investigation of MOVPE growth of silicon delta -doped GaAs, AlAs and AlxGa1 -xAs epilayers and different methods used for their characterisation are pr esented. The epitaxial structures were grown in an atmospheric pressure hor izontal AIX 200 Aixtron reactor. Delta doping was formed by SiH, introducti on during the growth interruption. The influence of the growth temperature and AlxGa1-xAs composition on delta-doping characteristics, carrier concent ration and mobility is discussed. Properties of the investigated Si delta - doped structures were examined using capacitance -voltage measurements, Van der Pauw-Hall measurements (300K, 77K), photocurrent measurements, photore flectance spectroscopy and X-ray measurements.