Structural properties of InSbBi and InSbAsBi thin films prepared by the flash-evaporation method

Thin films of InSbBi and InSbAsBi were obtained for the first time by the f lash-evaporation method using a mixture of powders of InSb, InBi and InAs. The structure and the composition of the films were investigated by XRD, SE M coupled with an X-ray microprobe, XPS and SIMS. The energy band-gap was d etermined from the optical transmittance and the temperature dependence of the Hall coefficient. It was found that the maximum concentration of Bi on the substitutional sites in the films is about I at.%. This concentration i s independent of the As concentration. The incorporation of Bi and As decre ases the energy band-gap to 0.1 eV. The obtained films have a number of inc lusions composed mainly of InBiSb alloys. This work demonstrates the applic ability of the flash evaporation method for obtaining the mixed crystal fil ms having parameters useful for the applications in optoelectronics.