Device series resistance calculations for vertical cavity surface-emittinglasers

The individual resistances arising from current transport through the semic onductor layers and the ohmic contacts in an implant-apertured, index-guide d 850 nm vertical cavity surface-emitting laser (VCSEL) have been calculate d from Hall and transmission line method data. The results can be used to s imulate the expected VCSEL current-voltage characteristic, which shows exce llent agreement with the experimental data. This process provides a simple method for predicting the effect of changes in epitaxial layer structure th icknesses, doping, and materials on the dc characteristics of high performa nce VCSELs. (C) 2001 The Electrochemical Society.