Transport properties of a nanotube-based transistor

Authors
Esfarjani, K Farajian, AA Ebrahimi, F Kawazoe, Y
Citation
K. Esfarjani et al., Transport properties of a nanotube-based transistor, EUR PHY J D, 16(1-3), 2001, pp. 353-355
Citations number
5
Categorie Soggetti
Physics
Journal title
EUROPEAN PHYSICAL JOURNAL D
ISSN journal
14346060 → ACNP
Volume
16
Issue
1-3
Year of publication
2001
Pages
353 - 355
Database
ISI
SICI code
1434-6060(200109)16:1-3<353:TPOANT>2.0.ZU;2-3
Abstract
Transport properties of doped nanotube-based double junctions forming a nan otransistor arc, investigated within the tight binding formalism. The effec ts of doping, gate length and gate-source hopping have been considered. It is found that in addition to the importance of rotational symmetry in deter mining transport properties, large gains can be achieved for semiconducting doped tubes.