MMIC development for millimeter-wave space application

Citation
T. Takagi et al., MMIC development for millimeter-wave space application, IEEE MICR T, 49(11), 2001, pp. 2073-2079
Citations number
22
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
49
Issue
11
Year of publication
2001
Pages
2073 - 2079
Database
ISI
SICI code
0018-9480(200111)49:11<2073:MDFMSA>2.0.ZU;2-F
Abstract
The latest millimeter-wave monolithic-microwave integrated-circuit (MMIC) d evelopments and technologies at the Mitsubishi Electric Corporation, Kanaga wa, Japan, concerning high power amplifiers, low-noise amplifiers and phase shifters have been summarized. It has been shown that high-efficiency, low -noise, and low-loss performance for millimeter-wave space applications can be achieved by employing pseudomorphic high electron-mobility transistor ( p-HEMT) MMIC technology. The investigation for gamma-ray irradiation hardne ss has cleared that millimeter wave p-HEMT MMICs have over a 100 years of l ife against gamma-ray irradiation in the space environment.