Inductors play a key role in wireless front-end circuitry, yet are not gene
rally well suited for conventional RF integrated-circuit (RFIC) fabrication
processes. We have developed inductors that can be fabricated on a convent
ional RFIC silicon substrate, which use warping members to assemble themsel
ves away from the substrate to improve quality factor (Q) and self-resonanc
e frequency (SRF), and to provide a degree of variation in inductance value
. These self-assembling variable inductors are realized through foundry pro
vided microelectromechanical systems (MEMS) processing and have demonstrate
d temperature stable Q values greater than 13, SRF values well above 15 GHz
, and inductance variations greater than 18%. Simulations suggest the poten
tial for Q values above 20 and inductance variations greater than 30%, with
optimized processing.