Preparation of CdIn2S4 thin films by chemical method

Semiconducting CdIn2S4 thin films have been deposited on amorphous glass su bstrates using a chemical method, successive ionic layer adsorption and rea ction (SILAR). The influence of preparative parameters on the properties of the films has been studied. The thickness of the film is found to be 0.44 mum. The films have been characterized for structural, optical and electric al transport properties by means of X-ray diffraction, optical absorption, electrical resistivity and thermoelectric power measurements techniques. Th e films are found to be nanocrystalline with optical bandgap 2.12 eV. The e lectrical resistivity was of the order of 10(4) Omega -cm.