Te distribution in space grown GaSb

Citation
Ae. Voloshin et al., Te distribution in space grown GaSb, J CRYST GR, 234(1), 2002, pp. 12-24
Citations number
28
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
234
Issue
1
Year of publication
2002
Pages
12 - 24
Database
ISI
SICI code
0022-0248(200201)234:1<12:TDISGG>2.0.ZU;2-G
Abstract
Inhomogeneity of a space grown crystal of Te-doped GaSb has been studied by the quantitative plane wave X-ray topography. The crystal is free of stria tions, whereas Te distribution over its cross section is noticeably nonunif orm. A region formed by the advancement of a facet, which was present at th e growth front, is revealed. This region is enriched with Te and contains s everal striations, at one of which a twin originates. Possible reasons for a nonuniform Te incorporation, growth-front faceting, and twinning are disc ussed. The conditions for growing high-quality crystals by the Bridgman met hod in space are suggested. These are (1) a reasonably small clearance betw een the growing crystal and the ampoule wall and (2) no growth-front faceti ng. (C) 2002 Elsevier Science B.V. All rights reserved.