Statistical investigation on morphology development of gallium nitride in initial growth stage

Morphology of Gallium Nitride (GaN) in initial growth stage was observed wi th atomic force microscopy (AFM) and scanning electron microscopy (SEM), It was found that the epilayer developed from islands to coalesced film. Stat istics based on AFM observation was carried out to investigate the morpholo gy characteristics. It was found that the evolution of height distribution could be used to describe morphology development. Statistics also clearly r evealed variation of top-face growth rate among islands. Indium-doping effe ct on morphology development was also statistically studied. The roughening and smoothing behavior in morphology development was explained. (C) 2002 E lsevier Science B.V. All rights reserved.