Study on the lateral growth of silicon films from metal solutions with temperature gradient

The growth of Si film from Cu-Si solution with temperature gradient was con ducted experimentally and examined by a simplified diffusion-controlled gro wth model calculation. It was found that the relation between the grown fil m thickness distribution along the temperature gradient direction and the c ooling rate could be explained by the model calculation, and values for bin ary diffusion coefficient in the Cu-Si solution was estimated. The experime ntal results showed that a uniform film growth at the cooling rate as high as 0.1 degreesC/s was possible. (C) 2002 Elsevier Science B.V. All rights r eserved.