Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

Solid-phase epitaxy was examined in deep amorphous volumes formed in silico n wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being trans formed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified wit h both plan-view and cross-sectional transmission electron microscopy analy ses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniq uely from the crystallization of volumes in this particular geometry.