Increased medium-range order in amorphous silicon with increased substratetemperature

Citation
Pm. Voyles et al., Increased medium-range order in amorphous silicon with increased substratetemperature, J NON-CRYST, 293, 2001, pp. 45-52
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
293
Year of publication
2001
Pages
45 - 52
Database
ISI
SICI code
0022-3093(200111)293:<45:IMOIAS>2.0.ZU;2-G
Abstract
Using fluctuation electron microscopy, we have measured the medium-range or der of magnetron sputtered silicon thin films as a function of substrate te mperature from the amorphous to polycrystalline regimes. We find a smooth i ncrease in the medium-range order of the samples, which we interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These da ta are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrat e temperature. (C) 2001 Elsevier Science B.V. All rights reserved.