Recently, much attention has been focused on cobalt oxide-based materials.
In this study, Co3O4, CoO and CoO-SiO2 coatings were synthesized via sol-ge
l using cobalt acetate [Co(CH3COO)(2)-4H(2)O] and tetraethoxysilane [Si(OC2
H5)(4)] (TEOS) as starting compounds. The precursor choice was made taking
into account that acetate decomposes under thermal treatment without leavin
g residual contaminants inside the coatings. The films were prepared by a d
ip-coating procedure from alcoholic solutions of the proper precursors and
subsequently annealed under different conditions. Co3O4 coatings were obtai
ned after heating in air or nitrogen at 300 degreesC. Treatments in reducin
g atmosphere (H-2/Ar) yielded CoO layers up to 500 degreesC, and films of m
etallic cobalt for firing at higher temperatures. CoO-SiO2 coatings were he
ated in air between 300 and 900 degreesC. CoO cluster formation in the sili
ca glass layer is not yet well clarified. The chemical composition and the
microstructural evolution of the coatings were studied by X-ray photoelectr
on spectroscopy (XPS), secondary-ion mass spectrometry (SIMS), UV-Vis spect
roscopy and X-ray diffraction (XRD). (C) 2001 Elsevier Science B.V. All rig
hts reserved.