TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF INALSB INSB BILAYERS AND SUPERLATTICES/

Citation
Md. Robertson et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF INALSB INSB BILAYERS AND SUPERLATTICES/, Micron, 28(2), 1997, pp. 175-183
Citations number
21
Categorie Soggetti
Microscopy
Journal title
MicronACNP
ISSN journal
09684328
Volume
28
Issue
2
Year of publication
1997
Pages
175 - 183
Database
ISI
SICI code
0968-4328(1997)28:2<175:TECOII>2.0.ZU;2-L
Abstract
High quality InAlSb/InSb bilayers and superlattices have been grown by magnetron sputter epitaxy and the physical structure has been charact erized by transmission electron microscopy. It was found that single l ayers of InAlSb, whose thicknesses greatly exceeded the equilibrium cr itical thickness, could be grown coherently oil (001) InSb for Al conc entrations approaching 13-15%. Also, it was observed that planar defec ts increased in density for both the bilayer and superlattice structur es as the Al concentration increased. (C) 1997 Elsevier Science Ltd.