Using a modulation technique and synchrotron radiation, we investigated the
charge density variations in cubic ZnSe and trigonal SiO2 induced by an ex
ternal high-electric field E applied along the [111] and [11.0] direction,
respectively. Selecting particularly weak reflections, we observed an almos
t linear variation of the integrated intensity versus E changing by up to 2
% at \E \ = 3 kV/mm. For both crystals, the displacements of the relative i
on positions within the unit cell exceed the piezoelectric induced variatio
n of the unit cell parameters by at least one order of magnitude. The measu
red intensity variations of ZnSe can be explained by the opposite displacem
ent of the zinc and selenium ions towards the field direction breaking the
stiff tetrahedral coordination of the chemical bond. For quartz, the electr
ic field initiates a displacement of those oxygen ions only where the O-Si
bond is directed oblique to the field direction. The other oxygen ions and
the silicon positions remain nearly unchanged. Thus, the ionic arrangement
is described mainly by a change in the O-Si-O bonding angles. (C) 2001 Else
vier Science Ltd. All rights reserved.