Dynamics of the pseudogap transformation in semiconducting melts during metallization

Authors
Sklyarchuk, V Plevachuk, Y
Citation
V. Sklyarchuk et Y. Plevachuk, Dynamics of the pseudogap transformation in semiconducting melts during metallization, J PHYS-COND, 13(41), 2001, pp. 9179-9185
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
41
Year of publication
2001
Pages
9179 - 9185
Database
ISI
SICI code
0953-8984(20011015)13:41<9179:DOTPTI>2.0.ZU;2-3
Abstract
Electrical conductivity sigma (T) and thermo-emf alpha (T) measurements, pe rformed in a wide temperature range (from 700 to 1700 K) for binary S0.35Te 0.65 and ternary CuAsSe2 and TlASSe(2) liquid alloys, suggest that a transi tion from semiconducting to metal conductivity occurs. The metallization te mperature determined by thermo-emf measurements is lower than that determin ed by electrical conductivity. A temperature-dependent transformation of th e pseudogap width is interpreted in the frame of a screening mechanism of t he bound states by the free electron gas in the pseudogap region.