Epitaxial growth of erbium silicide nanowires on silicon(001)

Authors
Chen, Y Ohlberg, DAA Williams, RS
Citation
Y. Chen et al., Epitaxial growth of erbium silicide nanowires on silicon(001), MAT SCI E B, 87(3), 2001, pp. 222-226
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
222 - 226
Database
ISI
SICI code
0921-5107(200112)87:3<222:EGOESN>2.0.ZU;2-P
Abstract
Submonolayer amounts of Er deposited onto Si(001) react with the substrate to form epitaxial nanowires of crystalline ErSi2. The ErSi2 nanowires are < 1 nm high, a few nanometers wide, close to a micron long, and crystallograp hically aligned to Si < 110 > directions. The growth of uniaxial structures occurs because the different crystal structures of ErSi2 and Si have a goo d lattice match along one Si < 110 > crystallographic axis (- 1.3%) but a s ignificant mismatch along the perpendicular Si < 110 > axis (+ 6.5%). An en ergetic model explains the formation of the ErSi2 nanowires. (C) 2001 Elsev ier Science B.V. All rights reserved.