Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application

Citation
Hj. Osten et al., Dopant diffusion control by adding carbon into Si and SiGe: principles anddevice application, MAT SCI E B, 87(3), 2001, pp. 262-270
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
09215107 → ACNP
Volume
87
Issue
3
Year of publication
2001
Pages
262 - 270
Database
ISI
SICI code
0921-5107(200112)87:3<262:DDCBAC>2.0.ZU;2-L
Abstract
The incorporation of low concentrations of carbon ( < 10(20) cm(-1)) into t he SiGe region of a heterojunction bipolar transistor (HBT) can significant ly suppress boron outdiffusion. caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrat e excellent static parameters, exceeding the performance of state-of-the-ar t SiGe HBTs. Carbon also enhances the high frequency performance, because i t allows one to use a high B doping level in a very thin SiGe base layer wi thout outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HB Ts into a 0.25 mum, epi-free. dual-gate CMOS platform. (C) 2001 Elsevier Sc ience B.V. All rights reserved.