Multiconfigurate character of the DX center and statistical analysis of transport data in Si-doped AlxGa1-xAs

Authors
Triki, A Mejri, H Ouaja, FR Selmi, A
Citation
A. Triki et al., Multiconfigurate character of the DX center and statistical analysis of transport data in Si-doped AlxGa1-xAs, PHYS ST S-B, 227(2), 2001, pp. 541-547
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
227
Issue
2
Year of publication
2001
Pages
541 - 547
Database
ISI
SICI code
0370-1972(200110)227:2<541:MCOTDC>2.0.ZU;2-Z
Abstract
Two statistics are developed using the multiconfigurate character of the DX center to analyse donors in n-type AlxGa1-xAs:Si. The first statistics is derived assuming that the conduction electrons arise exclusivelv from DX ce nters. The second statistics supposes the existence of shallow donors in ad dition to the deep DX center. Experimental Hall data, obtained in AlxGa1-xA s:Si grown by metalorganic chemical vapor deposition. are interpreted using these statistical calculations.