A series of experiments have been conducted to evaluate the magnetotranspor
t properties of rf-diode-sputter-deposited giant magnetoresistive multilaye
rs with either copper or copper-silver-gold nonferromagnetic (NFM) conducti
ng layers. The study revealed that rf-diode-deposited multilayers utilizing
Cu80Ag15Au5 as the NFM conducting layer possess significantly superior gia
nt magnetoresistance to otherwise identical device architectures that used
pure copper as the NFM conducting layer. To explore the origin of this effe
ct, copper and Cu80Ag15Au5 films of varying thickness have been grown under
identical deposition conditions and their surface morphology and roughness
have been investigated. Atomic-force microscopy revealed significant rough
ness and the presence of many pinholes in thin pure-copper films. The surfa
ce roughness of the Cu80Ag15Au5 layers was found to be much less than that
of pure copper, and the alloying eliminated the formation of pinholes. Usin
g an embedded-atom-method alloy potential, molecular-dynamics simulations h
ave been used to investigate the role of silver and gold upon the multilaye
r growth process. The smoother growth surface of Cu80Ag15Au5 was found to p
redominantly result from the addition of silver, which acts as a surfactant
during growth. Molecular statistics estimates of atom migration energy bar
riers indicated that both silver and gold have significantly higher mobilit
ies than copper atoms on a flat copper surface. However, gold was found to
be incorporated in the lattice whereas silver tended to segregate (and conc
entrate) upon the free surface, enhancing its potency as a surfactant. The
atomic-scale mechanism responsible for silver's surface-flattening effect h
as been explored. We found that silver, when present at a led ge edge, redu
ces the Ehrlich-Schwoebel barrier for copper, promoting a step-flow growth
mode. Gold was also found to reduce the Ehrlich-Schwoebel barrier, but its
potency was less than that of silver due to its lower surface concentration
. These observations suggest that small alloy additions can be used to mani
pulate the energy barriers that fundamentally control atomic assembly durin
g vapor deposition, and provide a potentially powerful means of controlling
the structure of thin films.