Miniaturization in electronics through improvements in established "top-dow
n" fabrication techniques is approaching the point where fundamental issues
are expected to limit the dramatic increases in computing seen over the pa
st several decades. Here we report a "bottom-up" approach in which function
al device elements and element arrays have been assembled from solution thr
ough the use of electronically welt-defined semiconductor nanowire building
blocks. We show that crossed nanowire p-n junctions and junction arrays ca
n be assembled in over 95% yield with controllable electrical characteristi
cs, and in addition, that these junctions can be used to create integrated
nanoscale field-effect transistor arrays with nanowires as both the conduct
ing channel and gate electrode. Nanowire junction arrays have been configur
ed as key OR, AND, and NOR logic-gate structures with substantial gain and
have been used to implement basic computation.