Nanoindentation experiments are an excellent probe of micromechanical prope
rties, but their interpretation is complicated by the multiple length scale
s involved. We report simulations of silicon nanoindentation, based on an e
xtended version of the local quasicontinuum model, capable of handling comp
lex crystal structures, This method embeds an interatomic force law within
a finite element framework. We identify which features of the simulation ar
e robust by investigating the effect of different interatomic force laws an
d different finite element meshes. We find that our simulations qualitative
ly reproduce the experimental load vs. displacement curves of indented sili
con and provide information on the microscopic aspects of the phase trans f
ormations that take place during indentation. This information is linked to
the macroscopic electrical resistance, providing a simple physical picture
that gives a satisfactory explanation of experimental results. (C) 2001 Ac
ta Materialia Ltd. Published by Elsevier Science Ltd. All rights reserved.