Multiscale simulations of silicon nanoindentation

Citation
Gs. Smith et al., Multiscale simulations of silicon nanoindentation, ACT MATER, 49(19), 2001, pp. 4089-4101
Citations number
31
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
49
Issue
19
Year of publication
2001
Pages
4089 - 4101
Database
ISI
SICI code
1359-6454(20011114)49:19<4089:MSOSN>2.0.ZU;2-5
Abstract
Nanoindentation experiments are an excellent probe of micromechanical prope rties, but their interpretation is complicated by the multiple length scale s involved. We report simulations of silicon nanoindentation, based on an e xtended version of the local quasicontinuum model, capable of handling comp lex crystal structures, This method embeds an interatomic force law within a finite element framework. We identify which features of the simulation ar e robust by investigating the effect of different interatomic force laws an d different finite element meshes. We find that our simulations qualitative ly reproduce the experimental load vs. displacement curves of indented sili con and provide information on the microscopic aspects of the phase trans f ormations that take place during indentation. This information is linked to the macroscopic electrical resistance, providing a simple physical picture that gives a satisfactory explanation of experimental results. (C) 2001 Ac ta Materialia Ltd. Published by Elsevier Science Ltd. All rights reserved.