High-termperature epitaxy of metastable sulfides on oxide substrates usingstoichiometric transportation

Pulsed laser deposition (PLD) has been employed to grow W-ZnS films on c-pl ane (001) sapphire substrates at high temperature (800 degreesC). This enab led the observation of excitonic resonances and the investigation of optica l properties of W-ZnS films for the first time. High-temperature growth of W-ZnS can trigger novel integrations, such as heterostructures or alloys be tween sulfides and oxides or nitrides. It can also stimulate investigations into the growth of sulfides on various materials and could provide an inno vative method for the application of sulfides.