High-performance InAs quantum-dot lasers near 1.3 mu m

High-performance quantum dot (QD) lasers near 1.3 mum were fabricated using four stacks of InAs QDs embedded within strained InGaAs quantum wells as a n active region and a reactive-ion-etched 5-mum-ridge waveguide design. For a 1.5-mm-long cavity QD laser, ground-state continuous-wave (cw) lasing ha s been achieved with a single facet output power of 15 mW at temperatures a s high as 100 degreesC, while at room temperature having a differential qua ntum efficiency of 55% and a single facet output power of 50 mW. The charac teristic temperature T-0 for ground-state cw lasing is 78 K up to our tempe rature measurement limit of 100 degreesC. (C) 2001 American Institute of Ph ysics.