Monolithic intracavity laser-modulator device fabrication using postgrowthprocessing of 1.55 mu m heterostructures

In this letter, we present the attractive characteristics of a fabrication method based on quantum-well intermixing induced by low energy ion implanta tion for the realization of photonic integrated circuits on GaInAsP-InP het erostructures. Intracavity electro-absorption modulators monolithically int egrated with laser devices were fabricated, using this postgrowth technique . The modulator section of the integrated devices was blueshifted by 75 nm while keeping the laser section unshifted and preserving very low values of the lasing threshold current density. Modulation depths in excess of 10 dB /V at 1.55 mum were obtained on these integrated devices which incorporate both a modulator and a laser. (C) 2001 American Institute of Physics.