Composite diamond-like carbon and silicon carbide tips grown on oblique-cut Si(111) substrates

A diamond-like carbon (DLC) and silicon carbide (SiC) composite tip structu re was successfully deposited on an oblique-cut Si(111) substrate of terrac e width less than 21.1 Angstrom. The DLC morphology depended on the Si(111) terrace width in the oblique-cut Si(111) surface. A continuous and dense D LC film started to form on the Si(111) substrate of terrace width higher th an 27.8 Angstrom. The density of the DLC/SiC composite tip also depended on the terrace width. The DLC films on the Si(111) with or without oblique cu t had about the same Raman characteristics regardless of their different mo rphologies. The formation mechanism of the DLC/SiC tip structure was discus sed. (C) 2001 American Institute of Physics.