Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors

Authors
Inokawa, H Fujiwara, A Takahashi, Y
Citation
H. Inokawa et al., Multipeak negative-differential-resistance device by combining single-electron and metal-oxide-semiconductor transistors, APPL PHYS L, 79(22), 2001, pp. 3618-3620
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
22
Year of publication
2001
Pages
3618 - 3620
Database
ISI
SICI code
0003-6951(20011126)79:22<3618:MNDBCS>2.0.ZU;2-I
Abstract
A multipeak negative-differential-resistance device is proposed. The device comprises a single-electron transistor (SET) and a metal-oxide-semiconduct or field-effect transistor (MOSFET), and can, in principle, generate an inf inite number of current peaks. Operation of the proposed device is verified at 27 K with a SET fabricated by the pattern-dependent oxidation process a nd a MOSFET on the same silicon-on-insulator wafer. Six current peaks and a peak-to-valley current ratio of 2.1 are obtained, and multiple-valued memo ry operation is successfully demonstrated. (C) 2001 American Institute of P hysics.