S. Bals et al., Why are sputter deposited Nd1+xBa2-xCu3O7-delta thin films flatter than NdBa2Cu3O7-delta films?, APPL PHYS L, 79(22), 2001, pp. 3660-3662
High-resolution electron microscopy and scanning tunneling microscopy have
been used to compare the microstructure of NdBa2Cu3O7-delta and Nd1+xBa2-xC
u3O7-delta thin films. Both films contain comparable amounts of Nd2CuO4 inc
lusions. Antiphase boundaries are induced by unit cell high steps at the su
bstrate or by a different interface stacking. In Nd1+xBa2-xCu3O7-delta the
antiphase boundaries tend to annihilate by the insertion of extra Nd layers
. Stacking faults, which can be characterized as local Nd2Ba2Cu4O9 inclusio
ns, also absorb the excess Nd. A correlation is made between the excess Nd
and the absence of growth spirals at the surface of the Nd-rich films. (C)
2001 American Institute of Physics.