Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope

Citation
S. Tiedke et al., Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope, APPL PHYS L, 79(22), 2001, pp. 3678-3680
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
22
Year of publication
2001
Pages
3678 - 3680
Database
ISI
SICI code
0003-6951(20011126)79:22<3678:DHMOSN>2.0.ZU;2-F
Abstract
Direct hysteresis measurements on single submicron structure sizes were per formed on epitaxial ferroelectric Pb(Zr,Ti)O-3 thin films grown on SrTiO3 w ith La0.5Sr0.5CoO3 (LSCO) electrodes. The samples were fabricated by focuse d-ion-beam milling resulting in pad sizes down to 200 nmx200 nm. The influe nce of parasitic capacitance of the measurement setup was eliminated by app lying an enhanced compensation procedure. No size effects were observed in capacitors milled down to 400 nmx400 nm. Thus, a published increase of P-ma x(1) for decreasing pad size can be explained by the parasitic influence of the setup. Finally, the inaccuracy of increasing coercive voltage due to t he coating of the cantilever of the atomic force microscope is discussed. ( C) 2001 American Institute of Physics.