Ultrahigh-density nanotransistors by using selectively grown vertical carbon nanotubes

A type of carbon nanotube transistors, which would be suitable for large-sc ale integration, has been fabricated from vertically aligned carbon nanotub es. We fabricated highly ordered carbon nanotubes, which are selectively gr own on the patterned aluminum oxide nanotemplates. Each device element is f ormed on a vertical carbon nanotube attached to a bottom (source) and upper (drain) electrodes and a gate electrode, which is electrostatically switch able. The transistors can be integrated in large arrays with the potential for tera-level density (2x10(11)/cm(2)). The vertical carbon nanotube trans istor shows ON/OFF switching operation at 30 K. (C) 2001 American Institute of Physics.