Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

Authors
Diagne, M He, Y Zhou, H Makarona, E Nurmikko, AV Han, J Waldrip, KE Figiel, JJ Takeuchi, T Krames, M
Citation
M. Diagne et al., Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction, APPL PHYS L, 79(22), 2001, pp. 3720-3722
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
22
Year of publication
2001
Pages
3720 - 3722
Database
ISI
SICI code
0003-6951(20011126)79:22<3720:VCVLED>2.0.ZU;2-4
Abstract
We have designed and implemented a vertical cavity violet light emitting di ode which features an optical resonator composed of an in situ grown GaN/Al GaN DBR and a high reflectivity dielectric mirror. The active InGaN MQW med ium is grown directly atop the AlGaN DBR and the structure includes an intr acavity lateral current spreading layer based on a p(++)/n(++) InGaN/GaN tu nnel junction. Electroluminescence shows directional emission, with modal l inewidths as narrow as 0.6 nm. (C) 2001 American Institute of Physics.