Low-threshold-current 1.32-mu m GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy

Using solid-source molecular-beam epitaxy with a rf-plasma source, we have grown GaInNAs/GaAs single-quantum-well lasers operating at 1.32 mum. For a broad-area oxide stripe, uncoated Fabry-Perot laser with a cavity length of 1600 mum, the threshold current density is 546 A/cm(2) at room temperature . The internal quantum efficiency for these lasers is 80%, while the materi als losses are 7.0 cm(-1). A characteristic temperature of 104 K was measur ed in the temperature range from 20 to 80 degreesC. Optical output up to 40 mW per facet under continuous-wave operation was achieved for these uncoat ed lasers at room temperature. (C) 2001 American Institute of Physics.