Extending the epitaxial thickness limit in low-substrate-temperature-grownGaAs

Authors
Apostolopoulos, G Boukos, N Travlos, A Herfort, J Ploog, KH
Citation
G. Apostolopoulos et al., Extending the epitaxial thickness limit in low-substrate-temperature-grownGaAs, APPL PHYS L, 79(21), 2001, pp. 3422-3424
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
21
Year of publication
2001
Pages
3422 - 3424
Database
ISI
SICI code
0003-6951(20011119)79:21<3422:ETETLI>2.0.ZU;2-B
Abstract
A method for extending the epitaxial thickness limit in low-temperature-gro wn GaAs (LT-GaAs) is presented. It is shown that the use of vicinal GaAs(00 1) substrates with a high misorientation angle reduces the surface roughnes s of LT-GaAs and inhibits the nucleation of defects which cause the breakdo wn of perfect epitaxial growth. Kinetic Monte Carlo simulations are used to describe the influence of the vicinal substrate on the growth mode and to estimate the appropriate misorientation angle. (C) 2001 American Institute of Physics.