Electron field emission from sulfur-incorporated nanocrystalline carbon thin films

Citation
S. Gupta et al., Electron field emission from sulfur-incorporated nanocrystalline carbon thin films, APPL PHYS L, 79(21), 2001, pp. 3446-3448
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
21
Year of publication
2001
Pages
3446 - 3448
Database
ISI
SICI code
0003-6951(20011119)79:21<3446:EFEFSN>2.0.ZU;2-Q
Abstract
Results are reported on the electron field emission properties of sulfur-in corporated nanocrystalline carbon (n-C:S) thin films grown by hot-filament chemical vapor deposition technique. The lowest turn-on field values observ ed were around 4.0-4.5 V/mum, which are about half of those measured for fi lms grown without sulfur. Associated to the effect of addition of sulfur on field emission properties, there are interesting microstructural changes, as characterized with scanning electron microscopy, atomic force microscopy , and Raman spectroscopy techniques. The sulfur-incorporated films show smo other and finer-grained surfaces than those grown without sulfur. These res ults are similar to those found for the introduction of nitrogen, but diffe rent to those produced by oxygen addition to the chemical vapor deposition process. These findings are attributed to changes in the electronic band st ructure. (C) 2001 American Institute of Physics.