Characterization of high dose Fe implantation into p-GaN

High concentrations (3-5 at. %) of Fe were incorporated into p-GaN by direc t implantation at elevated substrate temperature (350 degreesC). Subsequent annealing at 700 degreesC produced apparent ferromagnetic behavior up to s imilar to 250 K for the 3 at. % sample. Selected area diffraction patterns did not reveal the presence of any other phases in the Fe-implanted region. The direct implantation process appears promising for examining the proper ties of magnetic semiconductors with application to magnetotransport and ma gneto-optical devices. (C) 2001 American Institute of Physics.